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WhatsApp: +86 15361554542
info@shysemi.com
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

Less Energy

More Efficiency

  • Home
  • Products 
    • IPM Modules
    • IGBT Modules
    • IGBT Discretes
    • IGBT Chips
    • SiC
    • FRD(MUR)
    • Bridge Rectifier
  • Application 
    • Energy Vehicle
    • Home Appliance
    • Renewable Energy
    • Industrial Equipment
    • Data Centers
  • Technology 
    • Latest IPM Technology
    • High Voltage (HV) Die Technolog
    • Reliability & Qualification
  • About Us 
    • Our Company
    • Technical Team
    • Custom Solutions
  • Contact Us
  • Blog
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We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

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IGBT Modules
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IPM Modules
IGBT Discretes
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规格书[SYD2065SL] 650V/20A IGBT features low loss, fast switching, built-in FRD, easy parallel for UPS

Package:TO-247-3L VCE(SAT)@typ.Tj=25°C: 1.7 VGEth@typ.Tj=25°C: 5.5 Details: SYD2065SLW/SLA/SLB/SLP 650V 20A trench IGBT with low VCE(sat), low switching loss, fast recovery diode, 5μs short-circuit withstand, multi-packages, RoHS for UPS, PFC, motor drive semiconductor solutions. *For English specification, please contact us.

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[SYD050Q065AY1S3] 650V/50A trench IGBT with low saturation voltage, fast switching, high temperature

Package:TO-247-3L VCE(SAT)@typ.Tj=25°C: 1.8 VGEth@typ.Tj=25°C: 4.5 Details: SYD050Q065AY1S3 650V 50A trench field‑stop IGBT, low VCE(sat), low switching loss, fast recovery, 175°C junction, RoHS, for solar converter, UPS, welding and high‑frequency power semiconductor solutions.

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[SYD4065RH1] 650V/40A IGBT transistor features ultra-low saturation voltage, fast switching

Package:TO-247 VCE(SAT)@typ.Tj=25°C: 1.55 VGEth@typ.Tj=25°C: 4.2 Details: SYD4065RH1 650V 40A trench IGBT with ultra-low VCE(sat), low switching loss, fast recovery, high thermal stability, RoHS compliant, ideal for PFC, power supply and industrial semiconductor solutions.

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[SYD3065SLB] 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD

Package:TO-220F VCE(SAT)@typ.Tj=25°C: 1.9 VGEth@typ.Tj=25°C: 4.0 Details: SYD3065SLW/SLA/SLB/SLP 650V 30A high-speed IGBT transistor offers low VCE(sat), low conduction/switching loss, fast recovery diode, 5μs short-circuit withstand, easy parallel operation, multi-packages (TO‑247/220/220F/263), ideal for inverter, UPS, PFC and motor drive semiconductor solutions. *For English specification, please contact us.

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[SYD075H065CX1S3] 650V/75A trench IGBT, low VCE(sat), fast switching, 175°C for solar/UPS/welding

Package:TO-247-3L VCE(SAT)@typ.Tj=25°C: 1.6 VGEth@typ.Tj=25°C: 4.5 Details: SYD075H065CX1S3 650V 75A trench field‑stop IGBT, 1.8V saturation voltage, low switching loss, 5μs SCSOA, built‑in FRD, 175°C, RoHS, solar converter, UPS, welding power semiconductor.

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[SYD060Q065AY1S3] 650V/60A trench IGBT, ultra‑low VCE(sat), fast switching, high‑temp resistant

Package:TO-247-3L VCE(SAT)@typ.Tj=25°C: 1.6 VGEth@typ.Tj=25°C: 4.5 Details: SYD060Q065AY1S3 650V 60A trench field‑stop IGBT, 1.6V low saturation voltage, fast switching loss, 175°C junction, built‑in FRD, RoHS, solar converter, UPS, welding, high‑frequency power semiconductor.

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[SYD3065SLW] 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD

Package:TO-247 VCE(SAT)@typ.Tj=25°C: 1.9 VGEth@typ.Tj=25°C: 4 Details: SYD3065SLW 650V 30A high-speed IGBT transistor offers low VCE(sat), low conduction/switching loss, fast recovery diode, 5μs short-circuit withstand, easy parallel operation, multi-packages (TO‑247/220/220F/263), ideal for inverter, UPS, PFC and motor drive semiconductor solutions.

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[SYD1565SLA] 650V/15A IGBT provides low loss, built-in FRD and excellent parallel capability 1

Package:TO-220F VCE(SAT)@typ.Tj=25°C: 1.8 VGEth@typ.Tj=25°C: 6.0 Details: SYD1565SLA(P/B/D) 650V 15A IGBT transistor features low VCE(sat), low conduction & switching loss, fast recovery diode, positive temperature coefficient, 5μs short-circuit withstand, multi-packages (TO‑220/220F/252/263), ideal for UPS, PFC, motor control & power supply semiconductor solutions. *For English specifications, please contact us.

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[SYD2065SLB] 650V/20A IGBT delivers low saturation voltage, low loss, built-in fast recovery diode

Package:TO-220F VCE(SAT)@typ.Tj=25°C: 1.7 VGEth@typ.Tj=25°C: 5.5 Details: SYD2065SLA/SLP/SLB/SLD 650V 20A IGBT transistor features low VCE(sat), low conduction/switching loss, fast recovery diode, 5μs short-circuit withstand, multiple packages (TO-247/220/220F/263), ideal for UPS, PFC, motor control and power supply semiconductor solutions. *For English specifications, please contact us.

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[SYD1565SL] 650V/15A IGBT provides low loss, built-in FRD and excellent parallel capability

Package:TO-220F VCE(SAT)@typ.Tj=25°C: 1.8 VGEth@typ.Tj=25°C: 6.0 Details: SYD1565SLA(P/B/D) 650V 15A IGBT transistor features low VCE(sat), low conduction & switching loss, fast recovery diode, positive temperature coefficient, 5μs short-circuit withstand, multi-packages (TO‑220/220F/252/263), ideal for UPS, PFC, motor control & power supply semiconductor solutions. *For English specifications, please contact us.

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[SYIM756C-SST] 600V/15A, Hybrid SiC IPM with integrated PFC, low power loss, and built-in protection

Strength: 3Φ PFC: 40A 600V Applicable powerUp to 100 kHz, with NTC Details: 600V Intelligent Power Module features Hybrid SiC technology, low switching loss IGBT, SiC Schottky Barrier Diode (SBD), integrated bootstrap circuit, and advanced protection functions for inverter, converter, and motor control applications.

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[SYMF100HF120T1VH] 1200V/100A NPT IGBT Module featuring low switching loss, low VCE(sat), and >10μs

VCE(SAT)@typ.Tj=25°C: 5 VGEth@typ.Tj=25°C: 3.5 Detail: IGBT Module integrates advanced NPT IGBT technology with low saturation voltage, fast switching performance, low stray inductance, and robust short-circuit withstand capability, making it ideal for welding machines, UPS, SMPS, induction heating, and industrial inverter applications.

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[SYIM776C-SAAT] 600V/20A, Hybrid SiC IPM integrating 3-phase inverter and high-frequency PFC

Strength: 3Φ PFC: 40A 600V Applicable power: Up to 100 kHz, with NTC Details: SYIM776C-SST Hybrid SiC IPM combines 600V 3-phase RC-IGBT inverter, 40A PFC, SiC Schottky Barrier Diode (SiC SBD), and integrated protection functions to deliver high-efficiency power conversion and stable motor control for inverter and converter applications.

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[SYIM776C-SST] 600V/20A, Compact SIP intelligent power module with SiC PFC, low switching loss

Strength: 3Φ PFC: 40A 600V Applicable Power: Up to 100 kHz, with TDF Details: SYIM776C-SST 600V Intelligent Power Module features Hybrid SiC technology, RC-IGBT architecture, low EMI performance, integrated bootstrap circuit, and NTC temperature sensing, optimized for industrial inverter, motor drive, UPS, SMPS, and energy-efficient power electronics systems.

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[SYD3065SLA] 650V/30A IGBT offers low saturation voltage, fast switching, built-in FRD

Package:TO-220 VCE(SAT)@typ.Tj=25°C: 1.9 VGEth@typ.Tj=25°C: 4 Details: SYD3065SLW/SLA/SLB/SLP 650V 30A high-speed IGBT transistor features low VCE(sat), low conduction/switching loss, fast recovery diode, 5μs short-circuit withstand, multiple packages (TO-247/220/220F/263), ideal for inverter, UPS, PFC and motor drive semiconductor solutions. *For English specifications, please contact us.

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[SYD2065SLA] 650V/20A IGBT delivers low saturation voltage, low switching loss and built-in FRD

Package:TO-220 VCE(SAT)@typ.Tj=25°C: 1.7 VGEth@typ.Tj=25°C: 5.5 Details: SYD2065SLA/SLP/SLB/SLD 650V 20A high-performance IGBT transistor features low VCE(sat), low conduction & switching loss, fast recovery diode, multiple packages (TO-247/220/220F/263), ideal for UPS, PFC, motor drive & power supply semiconductor solutions. *For English specifications, please contact us.

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[SYIM756C-SAAT] 600V/15A Compact SIP intelligent power module with SiC PFC, optimized thermal design

Strength: 3Φ PFC: 40A 600V Applicable power: Up to 100 kHz, with NTC Details: SYIM756C-SST MIPS™ Intelligent Power System integrates 600V IGBT inverter, high-frequency SiC PFC, NTC temperature sensing, under-voltage protection, and low EMI design, ideal for motor drives, UPS, SMPS, and energy-efficient power conversion systems.

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[SYMT100HF170T1VH] 1700V/100A IGBT module features low saturation voltage, low switching loss

VCE(SAT)@typ.Tj=25°C: 6 VGEth@typ.Tj=25°C: 2.4 Details: SYMT100HF170T1VH 1700V 100A field stop trench gate IGBT module offers >10μs short-circuit capability, low VCE(sat), low switching loss, 4500V isolation, RoHS compliance, ideal for inverters, UPS, servo drives and wind power semiconductor solutions.

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[SYMT10PI120B3H] 1200V/10A Trench FS IGBT Module with low loss, fast switching, and high reliability

Package:EasyPIM1 VCE(SAT)@typ.Tj=25°C: 1.9 VGEth@typ.Tj=25°C: 5.5 Details: The SYMT10PI120B3H 1200V IGBT Module is designed for high-efficiency industrial inverter and servo motor drive systems. Built with advanced Trench & Field Stop IGBT technology, it delivers low VCE(sat), fast switching performance, low power loss, and high short-circuit ruggedness. With optimized thermal management, low stray inductance, and reliable high-temperature operation up to 175°C, this industrial-grade IGBT power module is ideal for motor drives, automation equipment, energy conversion systems, and high-reliability power electronics applications.

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[SYMT100PI120T6H-M] 1200V/100A IGBT module features low saturation voltage, built-in NTC

VCE(SAT)@typ.Tj=25°C: 1.9 VGEth@typ.Tj=25°C: 5.5 Details: SYMT100PI120T6H-M 1200V 100A field stop trench gate IGBT module offers >10μs short-circuit withstand, low VCE(sat), low loss, low stray inductance, NTC thermistor, 2500V isolation, RoHS compliant, ideal for industrial inverters, servo drives, brake chopper and rectifier semiconductor solutions.

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    As an innovative power semiconductor supplier, SHYSEMI specializes in the R&D, manufacturing, and sales of advanced power devices. offering high-performance IPMs, IGBTs, SiC solutions, MOSFETs, and related technologies for energy conversion, EVs, industrial automation, and renewable energy systems.

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